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The advancement of supercomputing and AI-Based technologies require the highest caliber of memory that can meet
industry needs for bandwidth, capacity, and efficiency. HBM2E Flashbolt can boost the power of AI, handle more Big Data
through its expanded capacity, and provide high-bandwidth.

Building upon the experience of leading high-end technological advancement across various industries such as AI algorithm,
data science, Autonomous driving, 5G and etc., Samsung once again establishes its pioneering role in the memory industry with
the first ever HBM2E solution.

HBM2E Flashbolt features a processing speed of 3.6 Gbps, which is approximately 1.5 times faster than the previous generation HBM.
On top of this rapid speed, HBM2E Flashbolt achieves high bandwidth through TSV technology that helps quickly process large amounts of
data, improving AI training efficiency by about 6 times the usual rate*.

HBM2E Flashbolt offers about twice the capacity of the previous generation HBM solution by stacking eight layers of
10nm-class 16 Gb DRAM dies. A larger capacity allows the development of deeper neural networks that greatly improves
the speed of acquiring results for Big Data analytics.